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 MMBTA05LT1G, MMBTA06LT1G Driver Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3
* These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Collector -Emitter Voltage MMBTA05LT1 MMBTA06LT1 Collector -Base Voltage MMBTA05LT1 MMBTA06LT1 Emitter -Base Voltage Collector Current - Continuous Symbol VCEO Value 60 80 Vdc 60 80 4.0 500 Vdc mAdc Unit Vdc
1 BASE 2 EMITTER 3 1 2 SOT-23 CASE 318 STYLE 6
VCBO
VEBO IC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C MMBTA05LT1 1H M G G
MARKING DIAGRAMS
1GM M G G
MMBTA06LT1
1H, 1GM = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
(c) Semiconductor Components Industries, LLC, 2010
October, 2010 - Rev. 5
1
Publication Order Number: MMBTA05LT1/D
MMBTA05LT1G, MMBTA06LT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) Emitter -Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector -Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Base -Emitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (Note 4) (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. fT 100 - MHz hFE - 100 100 - - - - 0.25 1.2 Vdc Vdc MMBTA05 MMBTA06 MMBTA05 MMBTA06 V(BR)CEO Vdc 60 80 4.0 - - - - 0.1 Vdc mAdc mAdc Symbol Min Max Unit
V(BR)EBO ICES ICBO
- -
0.1 0.1
VCE(sat) VBE(on)
TURN-ON TIME -1.0 V VCC +40 V 5.0 ms +10 V Vin 0 tr = 3.0 ns 5.0 mF 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities RB * CS t 6.0 pF 100 RL OUTPUT Vin 5.0 mF
TURN-OFF TIME +VBB VCC +40 V 100 RB * CS t 6.0 pF 100 RL OUTPUT
Figure 1. Switching Time Test Circuits
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2
MMBTA05LT1G, MMBTA06LT1G
f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 300 200 VCE = 2.0 V TJ = 25C C, CAPACITANCE (pF) 80 60 40 Cibo 20 TJ = 25C
100 70 50
10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 50 100
30 2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
4.0 0.1
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Current-Gain -- Bandwidth Product
Figure 3. Capacitance
1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30 20 10 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C 5.0 7.0 10
400 TJ = 125C ts h FE , DC CURRENT GAIN 200 25C -55C 100 80 60 40 0.5 VCE = 1.0 V
tf tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 500
1.0
2.0 3.0 5.0
10
20 30
50
100
200 300 500
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 4. Switching Time
Figure 5. DC Current Gain
1 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 150C 25C 0.1 -55C
1.1 1.0 0.9 0.8 -55C 0.7 0.6 0.5 0.4 0.3 0.2 150C 0.0001 0.001 0.01 0.1 1 25C IC/IB = 10
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 6. Collector Emitter Saturation Voltage vs. Collector Current
Figure 7. Base Emitter Saturation Voltage vs. Collector Current
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3
MMBTA05LT1G, MMBTA06LT1G
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VBE(on), BASE-EMITTER VOLTAGE (V) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 150C -55C 25C VCE = 1 V 1.0 TJ = 25C 0.8 IC = 50 mA 0.6 IC = 100 mA IC = 250 mA IC = 500 mA
0.4 IC = 10 mA
0.2 0
0.0001
0.001
0.01
0.1
1
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT (A)
IB, BASE CURRENT (mA)
Figure 8. Base Emitter Voltage vs. Collector Current
-0.8 IC, COLLECTOR CURRENT (A) 1
Figure 9. Collector Saturation Region
R qVB , TEMPERATURE COEFFICIENT (mV/ C)
1S 100 mS 0.1 10 mS
1 mS
-1.2
-1.6 RqVB for VBE
-2.0
Thermal Limit 0.01
-2.4 -2.8 0.5
0.001 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA)
0.1
1
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 10. Base-Emitter Temperature Coefficient
Figure 11. Safe Operating Area
ORDERING INFORMATION
Device MMBTA05LT1G MMBTA05LT3G MMBTA06LT1G MMBTA06LT3G Package SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) Shipping 3000 / Tape & Reel 10,000 / Tape & Reel 3000 / Tape & Reel 10,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com
4
MMBTA05LT1G, MMBTA06LT1G
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AN
D
SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08.
E
1 2
HE c e b q 0.25
A A1 L L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035
SCALE 10:1
0.8 0.031
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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5
MMBTA05LT1/D


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